document number: 89232 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual high-voltage trench mos barrier schottky rectifier ultra low v f = 0.39 v at i f = 2.5 a vt1060c, vit1060c vishay general semiconductor new product features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? solder bath temperature 275 c max. 10 s, per jesd 22-b106 ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency dc/dc converters, switching power supplies, freewheeling diodes, or-ing diode, and reverse battery protection. mechanical data case: to-220ab and to-262aa molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade base p/nhm3 - halogen-free, rohs compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test, hm3 suffix meets jesd 201 class 2 whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(av) 2 x 5.0 a v rrm 60 v i fsm 100 a v f at i f = 5.0 a 0.50 v t j max. 150 c to-220ab 1 2 3 1 k 2 3 to-262aa pin 1 pin 2 pin 3 k pin 1 pin 2 case pin 3 tmbs ? vt1060c vit1060c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vt1060c vit1060c unit maximum repetitive pe ak reverse voltage v rrm 60 v maximum average forward rectified current (fig. 1) per device i f(av) 10 a per diode 5 peak forward surge current 8. 3 ms single ha lf sine-wave superimposed on rated load i fsm 100 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89232 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vt1060c, vit1060c vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width 40 ms note (1) aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - forward power dissipation characteristics electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage per diode i f = 2.5 a t a = 25 c v f (1) 0.49 - v i f = 5.0 a 0.58 0.70 i f = 2.5 a t a = 125 c 0.39 - i f = 5.0 a 0.50 0.60 reverse current per diode v r = 60 v t a = 25 c i r (2) - 700 a t a = 125 c 6.6 25 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol vt1060c vit1060c unit typical thermal resistance per diode r jc 3.5 c/w per device 2.5 ordering information (example) package preferred p/n unit weight (g) pac kage code base quantity delivery mode to-220ab vt1060c-m3/4w 1.87 4w 50/tube tube to-262aa vit1060c-m3/4w 1.45 4w 50/tube tube to-220ab vt1060chm3/4w (1) 1.87 4w 50/tube tube to-262aa vit1060chm3/4w (1) 1.45 4w 50/tube tube case temperature (c) average forward rectified current (a) 12 4 0 25 50 75 100 125 mounted on specific heatsink 2 10 8 6 0 150 0 1.0 2.0 3.0 4.0 06 average forward current (a) average power disspation (w) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 1.5 2.5 3.5 d = t p /t t p t 5 4 3 2 1 d = 1.0 0.5
document number: 89232 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 23-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vt1060c, vit1060c vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical transient thermal impedance fig. 6 - typical j unction capacitance instantaneous forward voltage (v) 0 0.2 0.4 0.8 1.2 1.4 100 10 0.1 0.001 t a = 100 c t a = 25 c 0.6 1.0 t a = 150 c t a = 125 c instantaneous forward current (a) 1 0.01 20 30 40 50 60 70 80 90 100 percent of rated peak reverse voltage (%) instantaneous reverse current (ma) t a = 150 c t a = 25 c t a = 100 c t a = 125 c 1 0.1 0.01 0.001 100 10 10 1 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) 10 100
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89232 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 23-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vt1060c, vit1060c vishay general semiconductor new product package outline dimensions in inches (millimeters) to-220ab 0.113 (2.87) 0.103 (2.62) 0.370 (9.40) 0.360 (9.14) 0.415 (10.54) max. 0.635 (16.13) 0.625 (15.87) pi n 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.035 (0.90) 0.028 (0.70) 0.154 (3.91) 0.148 (3.74) 1 3 2 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) to-262aa 0.401 (10.19) 0.381 (9.68) 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.350 (8.89) 0.330 (8.38) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) k 123 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) pi n 0.411 (10.45) max. 0.250 (6.35) mi n . 30 (typ.) (ref.) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.104 (2.65) 0.096 (2.45) 0.057 (1.45) 0.045 (1.14) 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37)
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